Gate Drive Circuit Implementation for Parallel Connection of Power Devices Considering Parasitic Inductance

نویسندگان

چکیده

SiC devices are potential future power because of their higher switching speed and lower ON resistance than those Si devices. Research development efforts to apply them in medium- large-capacity conversion circuits underway. However, TO packages, which general-purpose difficult high-current applications owing low current ratings. Therefore, increasing the capacity by connecting parallel is being studied. imbalance during due differences device characteristics variations parasitic inductance problem. This study proposed a current-balancing procedure focused on inductances around gate drive circuit implementation. The method was verified conducting double-pulse tests at 300V 200A.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Switching IGBTs in parallel connection or with enlarged commutation inductance

Acknowledgements The results presented in this thesis were obtained during my employment as a scientific coworker at the The colleagues at EELE for the good working atmosphere. The students who supported me with their projects.

متن کامل

CMOS Digital Circuit Activity Considering Uncertainty of Gate Delays

|While estimating glitches or spurious transitions is challenge due to signal correlations, the random behavior of logic gate delays makes the estimation problem even more difcult. In this paper, we present statistical estimation of signal activity at the internal and output nodes of combinational and sequential CMOS logic circuits considering uncertainty of gate delays. The methodology is base...

متن کامل

Parasitic Power Collection in Shoe Mounted Devices

Possibilities for the " parasitic " collection of power from human walking motion are explored. The focus is on the walking action as a source of power because of the extensive range of motion and large dynamic forces associated with the heel strike and the bending of the sole. Two piezoelectric systems: a multilayer laminate made from PVDF foil and a unimorph piezoceramic composite (PZT); as w...

متن کامل

Active Gate Control for Parallel Operation of IGBT Devices

Asymmetry in power circuit layout, mismatch in gate drive circuits, and lack of carefully matched device selection commonly result in dynamic and static current mismatch during parallel operation of IGBT devices. This paper is aimed at presenting a technique for actively controlling the gate drive of the IGBT to ensure appropriate current sharing under transient and steady state conditions. The...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEJ journal of industry applications

سال: 2023

ISSN: ['2187-1094', '2187-1108']

DOI: https://doi.org/10.1541/ieejjia.22006323